IRFH5302DTRPBF

Part NumberIRFH5302DTRPBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V 29A 8VQFN

DatasheetIRFH5302DPBF

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 29A (Ta), 100A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount PQFN (5x6) Single Die

To learn about the specification of IRFH5302DTRPBF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRFH5302DTRPBF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRFH5302DTRPBF.
We are offering IRFH5302DTRPBF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRFH5302DTRPBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFH5302DPBF

Standard Package

4000

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

29A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3635pF @ 25V

FET Feature

Power Dissipation (Max)

3.6W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6) Single Die

Package / Case

8-PowerVDFN

All categories