IRFH5220TR2PBF

Part NumberIRFH5220TR2PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 3.8A PQFN

DatasheetIRFH5220PBF

Package / Case8-VQFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 3.8A (Ta), 20A (Tc) 3.6W (Ta), 8.3W (Tc) Surface Mount PQFN (5x6)

To learn about the specification of IRFH5220TR2PBF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRFH5220TR2PBF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRFH5220TR2PBF.
We are offering IRFH5220TR2PBF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRFH5220TR2PBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFH5220PBF

Standard Package

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

99.9mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1380pF @ 50V

FET Feature

Power Dissipation (Max)

3.6W (Ta), 8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6)

Package / Case

8-VQFN Exposed Pad

All categories