IRFH5020TR2PBF

Part NumberIRFH5020TR2PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 5.1A 8PQFN

DatasheetIRFH5020PBF

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 5.1A (Ta) 3.6W (Ta), 8.3W (Tc) Surface Mount 8-PQFN (5x6)

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IRFH5020TR2PBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFH5020PBF

Standard Package

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

55mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2290pF @ 100V

FET Feature

Power Dissipation (Max)

3.6W (Ta), 8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

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