IRFD224

Part NumberIRFD224

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 250V 630MA 4-DIP

DatasheetIRFD224

Package / Case4-DIP (0.300", 7.62mm)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 250V 630mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

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IRFD224 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFD224

Standard Package

100

Manufacturer

Vishay Siliconix

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

630mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 380mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 25V

FET Feature

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

All categories

IRFD224

Part NumberIRFD224

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 250V 630MA 4-DIP

DatasheetIRFD224

Package / Case4-DIP (0.300", 7.62mm)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 250V 630mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

IRFD224 - Product Attributes

IRFD224 - Tags