IRFD213

Part NumberIRFD213

ManufacturerVishay Siliconix

To learn about the specification of IRFD213, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRFD213 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRFD213.
We are offering IRFD213 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	450mA (Ta)
Rds On (Max) @ Id, Vgs	2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)