IRFBF30

Part NumberIRFBF30

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 900V 3.6A TO-220AB

DatasheetIRFBF30

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 3.6A (Tc) 125W (Tc) Through Hole TO-220AB

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IRFBF30 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFBF30

Standard Package

Manufacturer

Vishay Siliconix

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.7Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

All categories

IRFBF30

Part NumberIRFBF30

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 900V 3.6A TO-220AB

DatasheetIRFBF30

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 3.6A (Tc) 125W (Tc) Through Hole TO-220AB

IRFBF30 - Product Attributes

IRFBF30 - Tags