IRFBE30

Part NumberIRFBE30

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 4.1A TO-220AB

DatasheetIRFBE30

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB

To learn about the specification of IRFBE30, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRFBE30 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRFBE30.
We are offering IRFBE30 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRFBE30 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFBE30

Standard Package

1000

Manufacturer

Vishay Siliconix

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

All categories

IRFBE30

Part NumberIRFBE30

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 4.1A TO-220AB

DatasheetIRFBE30

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB

IRFBE30 - Product Attributes

IRFBE30 - Tags