IRFB23N20D


IRFB23N20D

Part NumberIRFB23N20D

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRFB23N20D - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package50
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1960pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 170W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

IRFB23N20D - Tags

IRFB23N20D IRFB23N20D PDF IRFB23N20D datasheet IRFB23N20D specification IRFB23N20D image IRFB23N20D India Renesas Electronics India IRFB23N20D buy IRFB23N20D IRFB23N20D price IRFB23N20D distributor IRFB23N20D supplier IRFB23N20D wholesales