IRFB11N50APBF

Part NumberIRFB11N50APBF

ManufacturerInfineon Technologies

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	1000
Manufacturer	Infineon Technologies
Series	HEXFET®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1423pF @ 25V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3