IRF9Z10

Part NumberIRF9Z10

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 6.7A TO220AB

DatasheetIRF9Z10

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB

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IRF9Z10 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRF9Z10

Standard Package

1000

Manufacturer

Vishay Siliconix

Series

Packaging

Tube

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 25V

FET Feature

Power Dissipation (Max)

43W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

All categories

IRF9Z10

Part NumberIRF9Z10

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 6.7A TO220AB

DatasheetIRF9Z10

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB

IRF9Z10 - Product Attributes

IRF9Z10 - Tags