IRF7807VD1

Part NumberIRF7807VD1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V 8.3A 8-SOIC

DatasheetIRF7807VD1

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO

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IRF7807VD1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRF7807VD1

Standard Package

Manufacturer

Infineon Technologies

Series

FETKY™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±20V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

All categories

IRF7807VD1

Part NumberIRF7807VD1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V 8.3A 8-SOIC

DatasheetIRF7807VD1

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO

IRF7807VD1 - Product Attributes

IRF7807VD1 - Tags