IRF7779L2TRPBF

Part NumberIRF7779L2TRPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF7779L2TR(1)PBF
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6660pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.3W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET L8
Package / Case	DirectFET™ Isometric L8

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