IRF6794MTR1PBF

Part NumberIRF6794MTR1PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 25V 32A DIRECTFET-MX

DatasheetIRF6794M(TR)1PBF

Package / CaseDirectFET™ Isometric MX

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 32A (Ta), 200A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX

To learn about the specification of IRF6794MTR1PBF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRF6794MTR1PBF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRF6794MTR1PBF.
We are offering IRF6794MTR1PBF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRF6794MTR1PBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRF6794M(TR)1PBF

Standard Package

1000

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

32A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4420pF @ 13V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

2.8W (Ta), 100W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

All categories