IRF6709S2TR1PBF

Part NumberIRF6709S2TR1PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 25V 12A DIRECTFET-S1

DatasheetIRF6709S2TR(1)PbF

Package / CaseDirectFET™ Isometric S1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 12A (Ta), 39A (Tc) 1.8W (Ta), 21W (Tc) Surface Mount DIRECTFET S1

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IRF6709S2TR1PBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRF6709S2TR(1)PbF

Standard Package

1000

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 39A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1010pF @ 13V

FET Feature

Power Dissipation (Max)

1.8W (Ta), 21W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET S1

Package / Case

DirectFET™ Isometric S1

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