IRF6708S2TRPBF

Part NumberIRF6708S2TRPBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V 13A DIRECTFET-LV

DatasheetIRF6708S2TR(1)PBF

Package / CaseDirectFET™ Isometric S1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 13A (Tc) 2.5W (Ta), 20W (Tc) Surface Mount DIRECTFET S1

To learn about the specification of IRF6708S2TRPBF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRF6708S2TRPBF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRF6708S2TRPBF.
We are offering IRF6708S2TRPBF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRF6708S2TRPBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRF6708S2TR(1)PBF

Standard Package

4800

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.9mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1010pF @ 15V

FET Feature

Power Dissipation (Max)

2.5W (Ta), 20W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET S1

Package / Case

DirectFET™ Isometric S1

All categories