IRF6668TR1PBF


IRF6668TR1PBF

Part NumberIRF6668TR1PBF

Manufacturer

Description

Datasheet

Package / CaseDirectFET™ Isometric MZ

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRF6668TR1PBF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1320pF @ 25V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MZ
Package / CaseDirectFET™ Isometric MZ

IRF6668TR1PBF - Tags

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