IRF6668TR1

Part NumberIRF6668TR1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 80V 55A DIRECTFET-MZ

DatasheetIRF6668

Package / CaseDirectFET™ Isometric MZ

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 55A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ

To learn about the specification of IRF6668TR1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRF6668TR1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRF6668TR1.
We are offering IRF6668TR1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRF6668TR1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRF6668

Standard Package

1000

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1320pF @ 25V

FET Feature

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MZ

Package / Case

DirectFET™ Isometric MZ

All categories