IRF6646TR1

Part NumberIRF6646TR1

ManufacturerInfineon Technologies

To learn about the specification of IRF6646TR1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRF6646TR1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRF6646TR1.
We are offering IRF6646TR1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2060pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ MN
Package / Case	DirectFET™ Isometric MN