IRF6641TR1PBF

Part NumberIRF6641TR1PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 4.6A DIRECTFET

DatasheetIRF6641TRPbF

Package / CaseDirectFET™ Isometric MZ

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 4.6A (Ta), 26A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ

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IRF6641TR1PBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRF6641TRPbF

Standard Package

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

4.6A (Ta), 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

59.9mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2290pF @ 25V

FET Feature

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MZ

Package / Case

DirectFET™ Isometric MZ

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