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IRF6619


IRF6619

Part NumberIRF6619

Manufacturer

Description

Datasheet

Package / CaseDirectFET™ Isometric MX

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRF6619 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package4800
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs57nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5040pF @ 10V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

IRF6619 - Tags

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