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IRF6608


IRF6608

Part NumberIRF6608

Manufacturer

Description

Datasheet

Package / CaseDirectFET™ Isometric ST

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRF6608 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package4800
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 13A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2120pF @ 15V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ ST
Package / CaseDirectFET™ Isometric ST

IRF6608 - Tags

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