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IRF610SPBF

IRF610SPBF

Part NumberIRF610SPBF

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 3.3A D2PAK

DatasheetIRF610S, SiHF610S

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 3.3A (Tc) 3W (Ta), 36W (Tc) Surface Mount D2PAK

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IRF610SPBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF610S, SiHF610S
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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