IRF5803D2

Part NumberIRF5803D2

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 40V 3.4A 8-SOIC

DatasheetIRF5803D2

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO

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IRF5803D2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRF5803D2

Standard Package

Manufacturer

Infineon Technologies

Series

FETKY™

Packaging

Tube

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

112mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1110pF @ 25V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

All categories

IRF5803D2

Part NumberIRF5803D2

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 40V 3.4A 8-SOIC

DatasheetIRF5803D2

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO

IRF5803D2 - Product Attributes

IRF5803D2 - Tags