IRF1902GPBF

Part NumberIRF1902GPBF

ManufacturerInfineon Technologies

To learn about the specification of IRF1902GPBF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRF1902GPBF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRF1902GPBF.
We are offering IRF1902GPBF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	95
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta)
Rds On (Max) @ Id, Vgs	85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 15V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)