IPW65R125C7XKSA1

Part NumberIPW65R125C7XKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V TO247

DatasheetIPW65R125C7

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 18A (Tc) 101W (Tc) Through Hole PG-TO247-3

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IPW65R125C7XKSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPW65R125C7

Standard Package

240

Manufacturer

Infineon Technologies

Series

CoolMOS™ C7

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 8.9A, 10V

Vgs(th) (Max) @ Id

4V @ 440µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1670pF @ 400V

FET Feature

Power Dissipation (Max)

101W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

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