IPW65R110CFDFKSA2

Part NumberIPW65R110CFDFKSA2

ManufacturerInfineon Technologies

DescriptionHIGH POWER_LEGACY

DatasheetIPx65R110CFD

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3-41

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IPW65R110CFDFKSA2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx65R110CFD

Standard Package

240

Manufacturer

Infineon Technologies

Series

CoolMOS™ CFD2

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs

118nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3240pF @ 100V

FET Feature

Power Dissipation (Max)

277.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3-41

Package / Case

TO-247-3

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