IPU80R3K3P7AKMA1
IPU80R3K3P7AKMA1
Part Number IPU80R3K3P7AKMA1 Description MOSFET N-CH 800V 1.9A TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 1.9A (Tc) 18W (Tc) Through Hole PG-TO251-3
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IPU80R3K3P7AKMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPU80R3K3P7 Standard Package 1500 Manufacturer Infineon Technologies Series CoolMOS™ P7 Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.3Ohm @ 590mA, 10V Vgs(th) (Max) @ Id 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 500V FET Feature - Power Dissipation (Max) 18W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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IPU80R3K3P7AKMA1 - Tags
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