IPSH4N03LA G

Part NumberIPSH4N03LA G

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 25V 90A IPAK

DatasheetIPD,IPSH4N03LA G

Package / CaseTO-251-3 Stub Leads, IPak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 90A (Tc) 94W (Tc) Through Hole PG-TO251-3

To learn about the specification of IPSH4N03LA G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPSH4N03LA G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPSH4N03LA G.
We are offering IPSH4N03LA G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPSH4N03LA G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPD,IPSH4N03LA G

Standard Package

1500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3200pF @ 15V

FET Feature

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak

All categories