IPS80R1K4P7AKMA1

Part NumberIPS80R1K4P7AKMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 4A IPAK-SL

DatasheetIPS80R1K4P7

Package / CaseTO-251-3 Stub Leads, IPak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 4A (Tc) 32W (Tc) Through Hole PG-TO251-3

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IPS80R1K4P7AKMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPS80R1K4P7

Standard Package

1500

Manufacturer

Infineon Technologies

Series

CoolMOS™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

FET Feature

Super Junction

Power Dissipation (Max)

32W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak

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