IPS65R600E6AKMA1

Part NumberIPS65R600E6AKMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V TO-251-3

DatasheetlPS65R600E6

Package / CaseTO-251-3 Stub Leads, IPak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7.3A (Tc) 63W (Tc) Through Hole PG-TO251-3

To learn about the specification of IPS65R600E6AKMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPS65R600E6AKMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPS65R600E6AKMA1.
We are offering IPS65R600E6AKMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPS65R600E6AKMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

lPS65R600E6

Standard Package

1500

Manufacturer

Infineon Technologies

Series

CoolMOS™ E6

Packaging

Tube

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 210µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 100V

FET Feature

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak

All categories