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IPS118N10N G


IPS118N10N G

Part NumberIPS118N10N G

Manufacturer

Description

Datasheet

Package / CaseTO-251-3 Stub Leads, IPak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPS118N10N G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1500
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.8mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4320pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak

IPS118N10N G - Tags

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