IPS110N12N3GBKMA1

Part NumberIPS110N12N3GBKMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 120V 75A TO251-3

DatasheetIPx110N12N3 G

Package / CaseTO-251-3 Stub Leads, IPak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-TO251-3

To learn about the specification of IPS110N12N3GBKMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPS110N12N3GBKMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPS110N12N3GBKMA1.
We are offering IPS110N12N3GBKMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPS110N12N3GBKMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx110N12N3 G

Standard Package

1500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4310pF @ 60V

FET Feature

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak

All categories