IPP80CN10NGHKSA1

Part NumberIPP80CN10NGHKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 13A TO-220

DatasheetIPx(78,80)CN10N G

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 13A (Tc) 31W (Tc) Through Hole PG-TO220-3

To learn about the specification of IPP80CN10NGHKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPP80CN10NGHKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPP80CN10NGHKSA1.
We are offering IPP80CN10NGHKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPP80CN10NGHKSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx(78,80)CN10N G

Standard Package

500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

80mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 12µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

716pF @ 50V

FET Feature

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

All categories