IPP65R310CFDAAKSA1

Part NumberIPP65R310CFDAAKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V TO-220-3

DatasheetIPx65R310CFDA

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 11.4A (Tc) 104.2W (Tc) Through Hole PG-TO220-3

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IPP65R310CFDAAKSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx65R310CFDA

Standard Package

500

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, CoolMOS™

Packaging

Tube

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

11.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

310mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1110pF @ 100V

FET Feature

Power Dissipation (Max)

104.2W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

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