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IPP410N30NAKSA1

IPP410N30NAKSA1

Part NumberIPP410N30NAKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH TO220-3

DatasheetIPP410N30N

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 300V 44A (Tc) 300W (Tc) Through Hole PG-TO220-3

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IPP410N30NAKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPP410N30N
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	41mOhm @ 44A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7180pF @ 100V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

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