IPP086N10N3GHKSA1

Part NumberIPP086N10N3GHKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 80A TO220-3

DatasheetIPx086N10N3, IPB083N10N3, IPD082N10N3 G

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3

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IPP086N10N3GHKSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx086N10N3, IPB083N10N3, IPD082N10N3 G

Standard Package

500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8.6mOhm @ 73A, 10V

Vgs(th) (Max) @ Id

3.5V @ 75µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3980pF @ 50V

FET Feature

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

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