IPP048N06L G

Part NumberIPP048N06L G

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 100A TO-220

DatasheetIPB,IPP048N06L G

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

To learn about the specification of IPP048N06L G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPP048N06L G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPP048N06L G.
We are offering IPP048N06L G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPP048N06L G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPB,IPP048N06L G

Standard Package

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

2V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7600pF @ 30V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

All categories