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IPN60R3K4CEATMA1

IPN60R3K4CEATMA1

Part NumberIPN60R3K4CEATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET NCH 600V 2.6A SOT223

DatasheetIPN60R3K4CE

Package / CaseSOT-223-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 2.6A (Tc) 5W (Tc) Surface Mount PG-SOT223

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IPN60R3K4CEATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPN60R3K4CE
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	93pF @ 100V
FET Feature	Super Junction
Power Dissipation (Max)	5W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	SOT-223-3

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