IPN50R650CEATMA1
IPN50R650CEATMA1
Part Number IPN50R650CEATMA1 Description MOSFET N-CHANNEL 500V 9A SOT223 Package / Case SOT-223-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 500V 9A (Tc) 5W (Tc) Surface Mount PG-SOT223
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IPN50R650CEATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPN50R650CE Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ CE Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 650mOhm @ 1.8A, 13V Vgs(th) (Max) @ Id 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 342pF @ 100V FET Feature - Power Dissipation (Max) 5W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223 Package / Case SOT-223-3
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