IPL65R1K0C6SATMA1

Part NumberIPL65R1K0C6SATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 8TSON

DatasheetIPL65R1K0C6S

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 4.2A (Tc) 34.7W (Tc) Surface Mount Thin-PAK (5x6)

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IPL65R1K0C6SATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPL65R1K0C6S

Standard Package

5000

Manufacturer

Infineon Technologies

Series

CoolMOS™ C6

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

328pF @ 100V

FET Feature

Power Dissipation (Max)

34.7W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Thin-PAK (5x6)

Package / Case

8-PowerTDFN

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