IPL60R2K1C6SATMA1

Part NumberIPL60R2K1C6SATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 8TSON

DatasheetIPL60R2K1C6S

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 2.3A (Tc) 21.6W (Tc) Surface Mount Thin-PAK (5x6)

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IPL60R2K1C6SATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPL60R2K1C6S

Standard Package

5000

Manufacturer

Infineon Technologies

Series

CoolMOS™ C6

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1Ohm @ 760mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 100V

FET Feature

Power Dissipation (Max)

21.6W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Thin-PAK (5x6)

Package / Case

8-PowerTDFN

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