IPI200N25N3GAKSA1

Part NumberIPI200N25N3GAKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 250V 64A TO262-3

DatasheetIPx200N25N3 G

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 250V 64A (Tc) 300W (Tc) Through Hole PG-TO262-3

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IPI200N25N3GAKSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx200N25N3 G

Standard Package

500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 64A, 10V

Vgs(th) (Max) @ Id

4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7100pF @ 100V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

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