IPI12CN10N G

Part NumberIPI12CN10N G

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 67A TO262-3

DatasheetIP(B,D,I,P)12CN10N G

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 67A (Tc) 125W (Tc) Through Hole PG-TO262-3

To learn about the specification of IPI12CN10N G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPI12CN10N G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPI12CN10N G.
We are offering IPI12CN10N G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPI12CN10N G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IP(B,D,I,P)12CN10N G

Standard Package

500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

67A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12.9mOhm @ 67A, 10V

Vgs(th) (Max) @ Id

4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4320pF @ 50V

FET Feature

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

All categories