IPI023NE7N3 G

Part NumberIPI023NE7N3 G

ManufacturerInfineon Technologies

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Rds On (Max) @ Id, Vgs	2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs	206nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	14400pF @ 37.5V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA