IPG20N10S4L35AATMA1

Part NumberIPG20N10S4L35AATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET 2N-CH 8TDSON

DatasheetIPG20N10S4L-35A

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 100V 20A 43W Surface Mount, Wettable Flank PG-TDSON-8-10

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IPG20N10S4L35AATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

IPG20N10S4L-35A

Standard Package

5000

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

20A

Rds On (Max) @ Id, Vgs

35mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

2.1V @ 16µA

Gate Charge (Qg) (Max) @ Vgs

17.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1105pF @ 25V

Power - Max

43W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount, Wettable Flank

Package / Case

8-PowerVDFN

Supplier Device Package

PG-TDSON-8-10

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