IPG20N10S4L22ATMA1


IPG20N10S4L22ATMA1

Part NumberIPG20N10S4L22ATMA1

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPG20N10S4L22ATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs22mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1755pF @ 25V
Power - Max60W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

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