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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD90N10S4L-06
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 6250pF @ 25V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STN4NF03L
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TK31V60W5,LVQ
Toshiba Semiconductor and Storage, N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV
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BUK964R1-40E,118
Nexperia USA Inc., N-Channel 40V 75A (Tc) 182W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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BUK9M19-60EX
Nexperia USA Inc., N-Channel 60V 38A (Tc) 62W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™
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IRLI530NPBF
Infineon Technologies, N-Channel 100V 12A (Tc) 41W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
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SQM120N06-3M5L_GE3
Vishay Siliconix, N-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263, Automotive, AEC-Q101, TrenchFET®
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IRFZ14PBF
Vishay Siliconix, N-Channel 60V 10A (Tc) 43W (Tc) Through Hole TO-220AB,
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STI76NF75
STMicroelectronics, N-Channel 75V 80A (Tc) 300W (Tc) Through Hole I2PAK, STripFET™ II
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IRFP23N50LPBF
Vishay Siliconix, N-Channel 500V 23A (Tc) 370W (Tc) Through Hole TO-247-3,
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DMT6009LCT
Diodes Incorporated, N-Channel 60V 37.2A (Tc) 2.2W (Ta), 25W (Tc) Through Hole TO-220AB,
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DMNH6012SPSQ-13
Diodes Incorporated, N-Channel 60V 50A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8, Automotive, AEC-Q101
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