Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD80R1K4P7ATMA1

IPD80R1K4P7ATMA1

IPD80R1K4P7ATMA1

Part NumberIPD80R1K4P7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 4A DPAK

DatasheetIPD80R1K4P7

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 4A (Tc) 32W (Tc) Surface Mount TO-252

To learn about the specification of IPD80R1K4P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R1K4P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R1K4P7ATMA1.
We are offering IPD80R1K4P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD80R1K4P7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD80R1K4P7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 500V
FET Feature	Super Junction
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R1K4P7ATMA1 - Related Products

	IPC100N04S51R7ATMA1	Infineon Technologies, N-Channel 40V 100A (Tc) 115W (Tc) Surface Mount PG-TDSON-8-34, OptiMOS™	View
	IXFX24N100Q3	IXYS, N-Channel 1000V 24A (Tc) 1000W (Tc) Through Hole PLUS247™-3, HiPerFET™	View
	BUK7208-40B,118	Nexperia USA Inc., N-Channel 40V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	STB120N4F6	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D2PAK, DeepGATE™, STripFET™ VI	View
	STL120N8F7	STMicroelectronics, N-Channel 80V 120A (Tc) 4.8W (Ta), 140W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F7	View
	SI8812DB-T2-E1	Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	SUD50N03-06AP-E3	Vishay Siliconix, N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	RHU002N06T106	Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	STP46NF30	STMicroelectronics, N-Channel 300V 42A (Tc) 300W (Tc) Through Hole TO-220, STripFET™ II	View
	FDS4672A	ON Semiconductor, N-Channel 40V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SIHG73N60AE-GE3	Vishay Siliconix, N-Channel 600V 60A (Tc) 417W (Tc) Through Hole TO-247AC,	View
	SQJA00EP-T1_GE3	Vishay Siliconix, N-Channel 60V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View

IPD80R1K4P7ATMA1 - Tags

IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 PDF IPD80R1K4P7ATMA1 datasheet IPD80R1K4P7ATMA1 specification IPD80R1K4P7ATMA1 image IPD80R1K4P7ATMA1 India Renesas Electronics India IPD80R1K4P7ATMA1 buy IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 price IPD80R1K4P7ATMA1 distributor IPD80R1K4P7ATMA1 supplier IPD80R1K4P7ATMA1 wholesales