IPD650P06NMATMA1

Part NumberIPD650P06NMATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 60V TO252-3

DatasheetPower, Sensing Selection Guide 2019

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 22A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313

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IPD650P06NMATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

Power, Sensing Selection Guide 2019

Standard Package

2500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 1.04mA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 30V

FET Feature

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-313

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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