IPD60R3K3C6ATMA1


IPD60R3K3C6ATMA1

Part NumberIPD60R3K3C6ATMA1

Manufacturer

Description

Datasheet

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPD60R3K3C6ATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesCoolMOS™ C6
PackagingCut Tape (CT)
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds93pF @ 100V
FET Feature-
Power Dissipation (Max)18.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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IPD60R3K3C6ATMA1 - Tags

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