Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD60R3K3C6ATMA1

IPD60R3K3C6ATMA1

IPD60R3K3C6ATMA1

Part NumberIPD60R3K3C6ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 600V 1.7A TO252-3

DatasheetIPD60R3K3C6

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 1.7A (Tc) 18.1W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD60R3K3C6ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD60R3K3C6ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD60R3K3C6ATMA1.
We are offering IPD60R3K3C6ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD60R3K3C6ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD60R3K3C6
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ C6
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	93pF @ 100V
FET Feature	-
Power Dissipation (Max)	18.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD60R3K3C6ATMA1 - Related Products

	IPB048N15N5LFATMA1	Infineon Technologies, N-Channel 150V 120A 313W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™-5	View
	STW56N65M2	STMicroelectronics, N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247, MDmesh™ M2	View
	TSM3N90CI C0G	Taiwan Semiconductor Corporation, N-Channel 900V 2.5A (Tc) 94W (Tc) Through Hole ITO-220AB,	View
	STP16NF06L	STMicroelectronics, N-Channel 60V 16A (Tc) 45W (Tc) Through Hole TO-220AB, STripFET™ II	View
	STD8N80K5	STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK, SuperMESH5™	View
	IPP037N06L3GXKSA1	Infineon Technologies, N-Channel 60V 90A (Tc) 167W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	STW18N60DM2	STMicroelectronics, N-Channel 600V 12A (Tc) 90W (Tc) Through Hole TO-247, MDmesh™ DM2	View
	PSMN1R6-30PL,127	Nexperia USA Inc., N-Channel 30V 100A (Tc) 306W (Tc) Through Hole TO-220AB,	View
	BSZ0901NSIATMA1	Infineon Technologies, N-Channel 30V 25A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	NTB6410ANT4G	ON Semiconductor, N-Channel 100V 76A (Tc) 188W (Tc) Surface Mount D2PAK,	View
	TSM60N600CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 8A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),	View
	FQD5N20LTM	ON Semiconductor, N-Channel 200V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount D-Pak, QFET®	View

IPD60R3K3C6ATMA1 - Tags

IPD60R3K3C6ATMA1 IPD60R3K3C6ATMA1 PDF IPD60R3K3C6ATMA1 datasheet IPD60R3K3C6ATMA1 specification IPD60R3K3C6ATMA1 image IPD60R3K3C6ATMA1 India Renesas Electronics India IPD60R3K3C6ATMA1 buy IPD60R3K3C6ATMA1 IPD60R3K3C6ATMA1 price IPD60R3K3C6ATMA1 distributor IPD60R3K3C6ATMA1 supplier IPD60R3K3C6ATMA1 wholesales